发明名称 Semiconductor memory device
摘要 A semiconductor device comprises a first bit line, a second bit line, a memory cell electrically coupled to the first bit line and the second bit line, a first amplification circuit configured to amplify a potential of the first bit line and a second amplification circuit configured to amplify a potential of the second bit line.
申请公布号 US6567326(B2) 申请公布日期 2003.05.20
申请号 US20010923948 申请日期 2001.08.08
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAZATO TAKAAKI;FUJIMOTO YUKIHIRO
分类号 G11C11/413;G11C7/06;G11C7/10;G11C11/4093;G11C11/419;(IPC1-7):G11C7/00 主分类号 G11C11/413
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