METHOD FOR CLEANING SINTERED SILICON CARBIDE COMPACT

摘要

PROBLEM TO BE SOLVED: To provide a method for cleaning a sintered silicon carbide compact which can easily clean and remove the organic and inorganic impurities existing on and near the surface of the sintered silicon carbide compact. SOLUTION: This method for cleaning the sintered silicon carbide compact comprises blasting dry ice powder of 1 to 3 mm in grain size to the surface of the sintered silicon carbide compact under conditions of a blasting pressure 3 to 6 kg/cm<2> and blasting time 0.3 to 0.5 seconds/cm<2> in cleaning the sintered silicon carbide compact by using a blasting method.