发明名称 Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
摘要 Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.
申请公布号 US6566150(B2) 申请公布日期 2003.05.20
申请号 US20020171695 申请日期 2002.06.17
申请人 HITACHI, LTD. 发明人 KOHNO RYUJI;KUMAZAWA TETSUO;KITANO MAKOTO;ARIGA AKIHIKO;WADA YUJI;BAN NAOTO;SHIBUYA SHUJI;MOTOYAMA YASUHIRO;MATSUMOTO KUNIO;KASUKABE SUSUMU;MORI TERUTAKA;SHIGI HIDETAKA;WATANABE TAKAYOSHI
分类号 G01R1/073;G01R3/00;H01L21/66;(IPC1-7):G01R31/26;H01L21/00;H01L21/44;H01L21/301 主分类号 G01R1/073
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