发明名称 |
Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step |
摘要 |
Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.
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申请公布号 |
US6566150(B2) |
申请公布日期 |
2003.05.20 |
申请号 |
US20020171695 |
申请日期 |
2002.06.17 |
申请人 |
HITACHI, LTD. |
发明人 |
KOHNO RYUJI;KUMAZAWA TETSUO;KITANO MAKOTO;ARIGA AKIHIKO;WADA YUJI;BAN NAOTO;SHIBUYA SHUJI;MOTOYAMA YASUHIRO;MATSUMOTO KUNIO;KASUKABE SUSUMU;MORI TERUTAKA;SHIGI HIDETAKA;WATANABE TAKAYOSHI |
分类号 |
G01R1/073;G01R3/00;H01L21/66;(IPC1-7):G01R31/26;H01L21/00;H01L21/44;H01L21/301 |
主分类号 |
G01R1/073 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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