Method for simultaneous deposition and sputtering of TEOS and device thereby formed

摘要

A method for making 0.25 micron semiconductor chips includes using TEOS as the high density plasma (HDP) inter-layer dielectric (ILD). More specifically, after establishing a predetermined aluminum line pattern on a substrate, TEOS is deposited and simultaneously with the TEOS deposition, excess TEOS is etched away, thereby avoiding hydrogen embrittlement of and subsequent void formation in the aluminum lines that could otherwise occur if silane were used as the HDP ILD.