| 摘要 |
A method of preparing a semiconductor using ion implantation comprises:(a) providing a first material comprising (i) a first Si wafer, (ii) at least one indigenous SiC layer, (iii) at least one non-indigenous SiC layer applied to the indigenous SiC layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer;(b) implanting ions in the non-indigenous SiC layer, thereby establishing an implant region which defines first and second portions of the non-indigenous SiC layer;(c) providing another material comprising (i) a second Si wafer, and (ii) an oxide layer applied to a face of the second wafer;(d) providing an assembly by bonding the oxide layers of the first material and the other material; and(e) separating the first and second portions of the non-indigenous SiC layer at the implant region.
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