| 摘要 |
An ion bombardment sputter etch of a layer to be etched is performed in an inert gas plasma including therein a small amount of a heavy halogen gas, such as iodine or bromine. The heavy halogen gas, in the form ions that are ionized by the plasma and halogen molecules, have the effect of bonding with the material of the layer to be etched, decreasing the sputter rate at areas normal to the ion bombardment, relative to the sputter rate at areas at an angle to the ion bombardmen. The redeposition rate of material sputtered from areas at an angle is also increased. A small amount of oxygen may also be included in the plasma to enhance the above effects.
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