发明名称 Flash memory array structure and method of forming
摘要 A method of forming a flash memory array structure includes forming a first dielectric layer outwardly from a semiconductor substrate, removing a portion of the first dielectric layer and the substrate to create a trench isolation region, forming a second dielectric layer in the trench isolation region, removing a portion of the second dielectric layer to create an exposed substrate region proximate a bottom of the trench isolation region, doping the exposed substrate region with an n-type dopant, and forming a silicide region in the exposed substrate region.
申请公布号 US6566200(B2) 申请公布日期 2003.05.20
申请号 US20020176139 申请日期 2002.06.20
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MEHRAD FREIDOON;POTLA SURESH;CHEN ZHIHAO
分类号 H01L21/8247;H01L27/115;(IPC1-7):H01L21/824 主分类号 H01L21/8247
代理机构 代理人
主权项
地址
您可能感兴趣的专利