| 发明名称 |
Narrow contact design for magnetic random access memory (MRAM) arrays |
| 摘要 |
An MRAM device (200) and method of manufacturing thereof having second conductive lines (228) with a narrow width. The second conductive lines (228) partially contact the resistive memory elements (214), reducing leakage currents in neighboring cells (214).
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| 申请公布号 |
US6567300(B1) |
申请公布日期 |
2003.05.20 |
| 申请号 |
US20020080415 |
申请日期 |
2002.02.22 |
| 申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
RABERG WOLFGANG;HOENIGSCHMID HEINZ |
| 分类号 |
G11C11/15;G11C11/16;H01L27/22;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
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