| 摘要 |
An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substrate to be treated and also capable of simplifying a system configuration. A thermal treatment system 1 according to the present invention is a system for forming a thin film of SiO2 on an Si wafer W and is provided with a reactant gas exhaust system 15 for reducing the pressure around the Si wafer W, a reactant gas supply system 14 for supplying hydrogen gas Gh and oxygen gas Go so as to mix them, onto the Si wafer W, and a chamber 2 having a lamp group 9G for heating the Si wafer W, and a wafer support member 3. The Si wafer W is set in the chamber 2, the interior of the chamber 2 is depressurized, the Si wafer W is mounted on the wafer support member 3, the reactant gases X as a mixture of hydrogen gas Gh and oxygen gas Go are supplied into a space Sb in the chamber 2 to flow, and the Si wafer W is heated by the lamp group 9G.
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