发明名称 Semiconductor device and method of forming a semiconductor device
摘要 A semiconductor device having an active region is formed in a layer provided on a semiconductor substrate. At least a portion of the semiconductor substrate below at least a portion of the active region is removed such that the portion of the active region is provided in a membrane defined by that portion of the layer below which the semiconductor substrate has been removed. A heat conducting and electrically insulating layer is applied to the bottom surface of the membrane. The heat conducting and electrically insulating layer has a thermal conductivity that is higher than the thermal conductivity of the membrane so that the heat conducting and electrically insulating layer allows heat to pass from the active region into the heat conducting and electrically insulating layer during normal operation of the device.
申请公布号 US6566240(B2) 申请公布日期 2003.05.20
申请号 US20010957609 申请日期 2001.09.21
申请人 CAMBRIDGE SEMICONDUCTOR LIMITED 发明人 UDREA FLORIN;AMARATUNGA GEHAN A. J.
分类号 H01L21/84;H01L23/373;(IPC1-7):H01L21/44 主分类号 H01L21/84
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