| 摘要 |
In the present invention a new method and circuit is disclosed to handle write data during CHE programming for a nonvolatile memory cell including cells created with MONOS technology. A plurality of bit lines are precharged to program inhibit all memory cells coupled to the bit lines. Then a selective bit line is discharged to program the selected memory cell. The number of bit lines selected to be precharged can be reduced to the bit line to be programmed to save power, and precharging a bit line can be done simultaneous with applying program data to a bit line to reduce the number of times a bit line is charged. The number of data latches may be reduced to the actual program data width, resulting in significant area savings and circuit simplification.
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