Multi-beam SEM for sidewall imaging

摘要

The present invention provides a system and method that facilitates measuring and imaging topographical features of a substrate, including lines and trenches having reentrant profiles. One aspect of the invention provides an electron microscope that simultaneously scans a substrate with two or more electron beams that are directed against the substrate with substantially differing angles of incidence. Secondary electrons resulting from the interaction of the substrate with the beams are detected by one or more secondary electron detectors. Each secondary electron detector may simultaneously receive secondary electrons resulting from the interaction of the substrate with two or more electron beams. In another of its aspects, the invention provides methods of analysis that permit the interpretation of such data to analyze critical dimensions and form images of the substrate. Critical dimensions that may be determined include feature heights and reentrant profile shapes. The topographical information provided is more complete than that of conventional SEM imaging and is obtained more rapidly than would be possible using multiple scans of a single electron beam.