发明名称 Enhanced EPROM structures with accentuated hot electron generation regions
摘要 An EPROM structure includes a NMOS transistor integrated with a capacitor. The terminal names of the NMOS transistor follow the conventional nomenclature: drain, source, body and gate. The gate of the NMOS transistor is connected directly and exclusively to one of the capacitor plates. In this configuration, the gate is now referred to as the "floating gate". The remaining side of the capacitor is referred to as the "control gate".
申请公布号 US6566705(B1) 申请公布日期 2003.05.20
申请号 US20010026320 申请日期 2001.12.20
申请人 INTERSIL AMERICAS, INC. 发明人 CHURCH MICHAEL DAVID
分类号 H01L21/336;H01L29/788;(IPC1-7):H01L29/76 主分类号 H01L21/336
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