| 摘要 |
A process for selectively reinforcing portions of a low k dielectric material which comprises first forming a low k dielectric layer, then forming openings in the low k layer in portions of the low k layer needing reinforcement, and then filling the openings with reinforcing material, preferably reinforcing material having a higher Young's modulus of elasticity than the low k dielectric material. Such selective reinforcement of certain portions of low k dielectric material may comprise selectively reinforcing the low k dielectric material beneath the bonding pads, with reinforcing material. The low k dielectric material may be reinforced by openings in the low k dielectric material formed beneath portions of the low k dielectric layer where a capping layer will be formed over the low k dielectric material. Subsequent formation of the capping layer will simultaneously fill the openings with capping material, which may then also function as reinforcement material in the openings. |
