发明名称 |
Silane treatment of low dielectric constant materials in semiconductor device manufacturing |
摘要 |
Improved dielectric layers are formed by surface treating the dielectric layer with a silane plasma prior to forming a subsequent layer thereon. Embodiments include forming a trench in a low k dielectric layer and modifying the side surfaces of the trench by subjecting the dielectric to a silane plasma produced in a PECVD chamber. A conductive feature is formed by depositing a conformal barrier layer on the low k dielectric including the treated side surfaces of the dielectric and depositing a conductive layer within the trench.
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申请公布号 |
US6566283(B1) |
申请公布日期 |
2003.05.20 |
申请号 |
US20020073068 |
申请日期 |
2002.02.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PANGRLE SUZETTE K.;NGO MINH VAN;HOPPER DAWN;YOU LU |
分类号 |
H01L21/3105;H01L21/768;(IPC1-7):H01L21/31;H01L23/48 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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