| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a deposition film forming method by a microwave plasma CVD method capable of forming a deposition film at a high speed and capable of reducing unevenness in the film thickness and characteristics of the deposition film. SOLUTION: In a microwave plasma CVD method in which, under low pressure, a gaseous starting material for forming a deposition film is cracked by microwave energy to form a deposition film on a substrate 104, at a vacuum of <=50 m Torr internal pressure, microwave energy smaller than the microwave energy required for 100% cracking the gaseous starting material is allowed to act on the gaseous starting material, simultaneously, rf energy higher than the microwave energy to be acted is allowed to act on the gaseous starting material, also, a mesh 113 composed of electrically conductive metal is interposed between the space in which the gaseous starting material is mainly cracked by the microwave energy to be acted and the substrate, and, moreover, the mesh is applied with DC bias voltage.</p> |
