| 摘要 |
PURPOSE: A crystalline silicon thin film transistor panel for an LCD and a method for manufacturing the same are provided to efficiently reduce off current of a pixel transistor by forming a low concentration dopping area while satisfying on current characteristic required from a pixel transistor and a driving device. CONSTITUTION: A transparent substrate includes a pixel area including a plurality of unit pixels and a driving circuit area. A pixel transistor is formed at each unit pixel of the pixel area of the transparent substrate, and is formed of a crystalline silicon active layer crystallized by an MILC(Metal Induced Lateral Crystallization), a gate insulating layer, and a gate electrode. A storage capacitor is formed at each unit pixel of the transparent substrate. A plurality of driving transistors are formed at the driving circuit area of the transparent substrate, and each driving transistor includes a crystalline silicon active layer crystallized by the MILC, a gate insulating layer, and a gate electrode. A low concentration dopping area to which impurities are injected at a low concentration is formed around a channel area of the driving circuit area. An insulating film(64) is formed to cover contact electrodes. A pixel electrode(65) is formed at a pixel transistor area to apply an electric field to liquid crystal in the unit pixels. |
