| 摘要 |
PURPOSE: An inductively coupled plasma reactor is provided to prevent etching of an inner wall due to ions of plasma state by improving a structure of the plasma reactor. CONSTITUTION: A tube structure(10) includes a gas inlet(11) and a gas outlet(12). The gas inlet(11) is connected with a processing gas source. The gas outlet(12) is connected with a process chamber or a vacuum chamber. The tube structure(10) has the first to the fourth legs(14,15,16,17) surrounded around an opening(13) to form a continuous loop. The tube structure(10) includes non-conductive layers of a cylindrical tube type and a conductive layer(20) formed therebetween. An insulator(18) is formed at an open portion of the non-conductive layer. A plurality of transformer cores(32) are installed at the first and the third legs(14,16). The conductive layer(20) is connected with an AC power source(40) through a capacitor(42) and a DC power source(44) through an inductor(46).
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