| 摘要 |
PURPOSE: A method for forming an opening portion of an interlayer dielectric is provided to prevent the recess of an isolating layer pattern by using an etching recipe having a slow etching speed. CONSTITUTION: After forming an isolating layer pattern(110) on a semiconductor substrate(100), an interlayer dielectric made of a lower insulation layer and an upper insulation layer. An upper opening portion(132) is formed in the upper insulation layer by using the first etching recipe for exposing the lower insulation layer. Then, a lower opening portion(127) is formed in the lower insulation layer by using the second etching recipe for exposing the semiconductor substrate(100). Preferably, the etching speed of the second etching recipe is slower than that of the first etching recipe, thereby preventing the recess of the isolating layer pattern(110).
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