| 摘要 |
PURPOSE: A method for manufacturing a high voltage semiconductor device is provided to be capable of simplifying manufacture processes and achieving low cost fabrication by improving the manufacturing method. CONSTITUTION: Ion implantations(M8,M9) for a low voltage N-well and P-well are carried out by using an N-well and P-well mask. At this time, a high voltage N-channel and P-channel stop ion implantation are simultaneously carried out by using the same masks. Then, the first blanket ion implantation is carried out for controlling the threshold voltage of high voltage PMOS without using a mask. The second blanket ion implantation is used without a mask when an LDD(Lightly doped drain) for low voltage PMOS is formed. At the time, the manufacturing method is capable of being carried out without a plurality of manufacturing processes, so that the manufacturing cost is reduced.
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