| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which enables the user to obtain a mask pattern high in equality of line width by forming a liquid film of a developer on the surface of a substrate, while suppressing the flow and the ripple within the developer, when performing the application of the developer by a scanning method to the substrate. SOLUTION: A supply nozzle, which can shift from one end side of a wafer W to the other end side, is prepared above a wafer W held horizontally, and this supply nozzle is provided with a rotor which can rotate freely about a horizontal axis orthogonal to the direction of progress of the supply nozzle in question. This rotor is cylindrical, and the surface is provided with discharge ports for a developer arranged linearly in the axial direction, along the circumference at equal intervals. At supplying of a developer, the rotor is rotated, and also the supply of a developer is performed from the discharge port, and in such a condition, that the supply nozzle is shifted, whereby a liquid film is formed over the entire surface of the wafer W.
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