| 摘要 |
PROBLEM TO BE SOLVED: To improve product performance and yield by suppressing the generation of foreign matters in a film forming process. SOLUTION: A plurality of substrates (wafers) are prepared, the substrates are placed at the upper part of a susceptor of a plasma CVD apparatus 100, and a film forming process is conducted for a plurality of substrates to deposit, for example, a silicon oxide film or the like to the upper part of the substrate by supplying raw material gas from a gas supply pipe 103. At the time of cleaning the inside of an apparatus or conducting the maintenance of the apparatus by opening a door 102 of a CVD chamber 101, an inert gas is supplied to the gas supply pipe 103 by closing a valve 103a and closing a valve 104a. As a result, the entry of atmospheric gas into the gas supply pipe 103 can be prevented and the generation of foreign matters such as oxide or the like into the gas supply pipe 103 can be suppressed. Accordingly, the generation of foreign matters during a subsequent process of a substrate can also be suppressed.
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