| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to be capable of improving photo sensitivity without using sophisticated processes. CONSTITUTION: A pixel including a light receiving element(32) is formed on a semiconductor substrate(30). A metal line(34) and a dummy metal pattern are formed on the first interlayer dielectric(33). The second interlayer dielectric(35) has a groove formed on the light receiving element while maintaining the topology of the metal line and the dummy metal pattern. An SOG(Spin On Glass) layer(36) having a concave part(200) is filled into the groove. The third interlayer dielectric(37) and a passivation layer(38) are sequentially formed on the second interlayer dielectric and the SOG layer. A planarization layer(39) is formed on the passivation layer. A convex microlens(40) is formed on the planarization layer.
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