PATTERN TRANSFER METHOD IN MANUFACTURING OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a pattern transfer method which can repeatedly obtain high resolution patterns in an easy manner, using a low-cost aligner. SOLUTION: A resist film of double-layer structure, consisting of a photosensitive resist film 5 as the lower layer and a polymer material film 2, having the UV-shielding effects as the surface layer, is formed on a substrate 4. A casting die 3 is pressed against the polymer material film 2 for forming the circuit pattern in ruggedness shapes 2a, 2b. These circuit patterns are exposed with UV rays and are then developed through wet etching process. In projected sections 2a, UV rays are fully shielded, while in recessed sections 2b, UV rays are partially transmitted. Accordingly, almost parallel UV rays reach the photosensitive resist film 5, even if UV rays do not form a strictly parallel beam.