| 摘要 |
PURPOSE: To improve the etching durability of resist pattern and to suppress a shrinkage caused by SEM observation. CONSTITUTION: A wafer substrate 1 on which a prescribed resist pattern 2 is formed is immersed into a solution 10 in which an organic material 11 is dissolved. Thereby, the organic material in the solution is introduced into holes 3 of the resist pattern. In general, carbon contributes to the improvement of etching durability of the resist film and, therefore, the etching durability of the resist pattern 2 is improved. In addition, by introducing the organic material 11 into the holes 3, a shrinkage caused by electron beam irradiation on SEM observation is also suppressed.
|
