发明名称 SEMICONDUCTOR DEVICE AND IT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To device an electrically effective contact part and its manufacturing method capable of expanding the contact area of the contact part and preventing the generation of a contact punching trouble even when misstep margin between a plug and lower wiring is reduced. SOLUTION: A cell plate electrode 12 composed of a TiN film is formed on a 4th inter-layer insulating film 10. Then a 5th inter-layer insulating film 13 is formed on the electrode 12. These laminated films are etched by using etching gas obtained by adding CF4 to C5 F8 +O2 +Ar to form a contact hole 16a so that the etching cross section of the electrode 12 becomes like a taper.
申请公布号 JP2003142576(A) 申请公布日期 2003.05.16
申请号 JP20010333741 申请日期 2001.10.31
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKEUCHI MASAHIKO
分类号 H01L21/302;H01L21/3065;H01L21/768;H01L21/8242;H01L23/522;H01L27/108 主分类号 H01L21/302
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