发明名称 |
SEMICONDUCTOR DEVICE AND IT MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To device an electrically effective contact part and its manufacturing method capable of expanding the contact area of the contact part and preventing the generation of a contact punching trouble even when misstep margin between a plug and lower wiring is reduced. SOLUTION: A cell plate electrode 12 composed of a TiN film is formed on a 4th inter-layer insulating film 10. Then a 5th inter-layer insulating film 13 is formed on the electrode 12. These laminated films are etched by using etching gas obtained by adding CF4 to C5 F8 +O2 +Ar to form a contact hole 16a so that the etching cross section of the electrode 12 becomes like a taper. |
申请公布号 |
JP2003142576(A) |
申请公布日期 |
2003.05.16 |
申请号 |
JP20010333741 |
申请日期 |
2001.10.31 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
TAKEUCHI MASAHIKO |
分类号 |
H01L21/302;H01L21/3065;H01L21/768;H01L21/8242;H01L23/522;H01L27/108 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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