| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a low-transposition nitride semiconductor single crystal. SOLUTION: A first nitride semiconductor layer is grown on a substrate, and an etch pit is formed in a transposition part that is formed in the first nitride semiconductor layer by etching. Then, a protective film is formed in the etch pit, and a second nitride semiconductor layer 4 is grown to bury the etch pit. Thus, the spreading of transposition is prevented and the transposition in the second nitride semiconductor is reduced. |
