| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device having high integration properties and good electrical characteristics. SOLUTION: The method for manufacturing the semiconductor storage device comprises a step of disposing a capacitor constituted of a plate electrode (capacitor electrode diffused layer 7), a storage electrode (boron-added polysilicon film 8) and a capacitor insulating film (oxide film 8) on the lower layer of a trench formed in a semiconductor substrate 1 and a transistor constituted of a drain region (N-type diffused layer 12), a source region (N-type diffused layer 21), and a gate electrode (boron-added polysilicon film 14) on the upper layer of the trench. |
