| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power wherein pressure resistance performance against mechanical pressure upon wire bonding is improved. SOLUTION: A bump 6 is formed on a gate electrode 10 of a semiconductor device 1 for electric power or an emitter electrode 11 of the same, and an electrode plate 2 is bonded with the bump 6. A bonding wire 3 is bonded with the surface of the electrode plate 2 on the opposite side of the bump 6. The bonding wire 3 is connected with the gate electrode 10 of the semiconductor device 1 for electric power or the emitter electrode 11 of the same through the electrode plate 2 in such a manner, so that mechanical pressure applied to the semiconductor device 1 for electric power is more reduced upon the bonding wire 3 being bonded, compared with the case where the bonding wire 3 is directly bonded with the electrode of the semiconductor device 1 for electric power. Thus, pressure resistance performance against the mechanical pressure is improved upon wire bonding. |
