| 摘要 |
PROBLEM TO BE SOLVED: To enable to obtain an ITO thin film with low resistance and high transmittance, reduce wastes of ITO materials, accommodate a plastic board, and realize lowering of cost. SOLUTION: An ITO pellet on a hearth 3 is sublimated by arc discharge with Ar as discharge gas in a film-forming chamber 1 of a direct-current arc discharge ion plating method to deposit an ITO film on a substrate 2. Here, a weight percent of SnO2 to be doped is set at 4 wt.% to 7 wt.%, O2 to be introduced at the same time as reacting gas is set at 2×10<-4> Torr to 4×10<-4> Torr, temperature of the substrate 2 to deposit an ITO film on is set at 80 deg.C to 100 deg.C, and at the same time, film-forming speed by the above deposition is set at 60 nm/min. To 250 nm/min. to form an ITO electrode on the above substrate. |
