METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To solve such a problem that, when linear laser light is emitted overlapped to a semiconductor film, a fringe is produced thereon and they affect the characteristic of the semiconductor film. SOLUTION: After first condition laser light is emitted to an amorphous semiconductor film in an atmosphere containing oxygen to crystallize it, an oxide film that is formed in a first condition laser light emission step is removed and a laser light irradiation device of 15 J or larger in output energy is used in an inert gas or a vacuum atmosphere to emit second condition planary laser light where the energy distribution of a laser light irradiation part is±3% or less and an irradiation area is 30 cm<2> or larger, thereby improving the flatness of the surface of a crystalline semiconductor film.