发明名称 |
ELECTRON BEAM EXPOSURE SYSTEM |
摘要 |
<p>PROBLEM TO BE SOLVED: To realize an electron beam exposure system of the proximity exposure system providing high throughput. SOLUTION: The electron beam exposure system of the proximity exposing system comprises a stage 49, an electro-optical column 2 and a vacuum chamber 1. This system is further provided with a preload chamber 11 for delivering and receiving a wafer 100, to and from a wafer cassette 16 and a load chamber 9 which fixes the wafer transferred from the preload chamber 11 to a pallet 41 and then transfers the wafer to the stage 49 in the vacuum chamber and also removes the wafer from the pallet 41 transferred from the stage 49, and then transfers the wafer to the preload chamber 11. The load chamber also switches from atmospheric conditions and vacuum conditions.</p> |
申请公布号 |
JP2003142393(A) |
申请公布日期 |
2003.05.16 |
申请号 |
JP20010342260 |
申请日期 |
2001.11.07 |
申请人 |
TOKYO SEIMITSU CO LTD |
发明人 |
SHIMAZU NOBUO;ENDO AKIHIRO;ISE TORU;FUKUI TOYOJI;FUJITA TAICHI;YANAGI YOSHIAKI;TSUDA MASAO;TSUDA HIDEAKI;NIHEI KOICHI;MIYAJI ATSUSHI |
分类号 |
G03F7/20;G03F9/00;H01J37/20;H01J37/305;H01L21/027;H01L21/68;H01L21/683;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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