| 摘要 |
PROBLEM TO BE SOLVED: To provide an analysis method of particles for analyzing even extremely fine metal and organic-family impurity particles that are less than 2μm and exist on the surface of an object to be analyzed such as a semiconductor wafer. SOLUTION: Coordinates of particles that are detected by a particle counter are measured (1), and the coordinates data of the particles and coordinates at the outer periphery of a wafer that are measured by a laser marker are converted to coordinates data for marking by an external computer (2, 3, and 4). Based on the coordinates data for marking, peripheries of the particles are marked (5 and 6). Additionally, according to the coordinates data of the particles and the coordinates of the wafer outer periphery that are measured by an analyzer (TOF-SIMS), conversion to coordinates data for analysis is made by the external computer (7 and 8). Based on the coordinates data for analysis, the mark is detected by the analyzer, and the particles are analyzed with the mark as a guide (9 and 10). |
