| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to embody a deep N- region profile for achieving the characteristics of dead zone and saturation signal. CONSTITUTION: A gate insulating layer(12) and a polysilicon layer are sequentially formed on a semiconductor substrate(10) defined by a transfer transistor and photodiode region. A convex hard mask(14B) is formed on the polysilicon layer. A gate(13A) of the transfer transistor is then formed by etching the polysilicon layer using the convex hard mask(14B). A photoresist pattern is formed on the resultant structure to expose the photodiode region. A deep N- impurity region(18) is formed to partially overlap the gate(13A) by implanting lightly doped dopants using the photoresist pattern as a mask.
|
