| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a fine crystal silicon photovoltaic element capable of forming a silicon film whose quality is high at a high speed film formation speed, and realizing the fine crystal silicon photovoltaic element whose photoelectric converting efficiency is high at low costs, and to provide this fine crystal silicon photovoltaic element. SOLUTION: In this method for manufacturing a fine crystal silicon photovoltaic element, when a silicon film is formed on a substrate 206 by using a plasma chemical vapor growth method, a high frequency power for plasma excitation whose power density is temporally changed is applied to a high frequency electrode 210 placed so as to be faced to the substrate 206.</p> |
