WAFER INCLUDING COMPOUND SEMICONDUCTOR SURFACE LAYER CONTAINING INDIUM AND CARRIER DENSITY EVALUATION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method for non-destructively evaluating the carrier density of a compound semiconductor wafer containing In, and to allow the evaluated wafer itself to be used for semiconductor device applications. SOLUTION: In the method for evaluating the carrier density of a wafer containing a compound semiconductor surface layer containing In by utilizing a C-V method, a liquid electrode is brought into contact with the surface of the wafer, and an applied voltage up to a voltage exceeding 10 V is utilized for non-destructively evaluating the carrier density without utilizing optical etching.