| 摘要 |
PROBLEM TO BE SOLVED: To provide a one-time programmable (OTP) memory with high density at the low cost, and to provide a method for its programming. SOLUTION: An OTP memory in accordance with one mode includes one or a plurality of memory arrays. Each memory array includes one or a plurality of row conductors extending in the direction of a row, and one or a plurality of column conductors extending in the direction of a column such that a cross point is formed at an intersection between the row conductors and the column conductors. Each memory array includes a state device formed at least at one cross point. The state device includes a fuse and an anti-fuse arranged in series to the fuse, and electrically makes contact with the row conductor and the column conductor. A method for programming the OTP memory comprises the steps of selecting the state device, applying write voltage to a row conductor electrically connected with a selected state device, and grounding a column conductor electrically connected with the selected state device. |
