| 摘要 |
PURPOSE: A method and apparatus for generating a mask utilized in conjunction with dipole illumination techniques are provided to compensate the intersection areas created by features which contact one another. CONSTITUTION: The width of a vertical critical feature(32) is adjusted in accordance with the values of the primary parameters(WLV,WRV), which are determined as a function of the proximity cluster associated with feature and the given photolithography system being utilized. The value of parameters(WLV,WRV), and all other parameters, are independent of one another. A horizontal critical feature(31) in the V-mask is protected by shielding according to primary parameters(SLV,SRV). The values of SLV and SRV define the extent of the shielding of the horizontal feature, and SLV and SRV are defined as a function of the proximity cluster associated with the horizontal feature(31) and the given photolithography system being utilized. |
