| 摘要 |
There is described a semiconductor device and a method of manufacturing it. The device comprises
a first insulating layer (40) which has, on one surface thereof a groove or a hole (42,43) reaching an other surface side;
a second insulating layer (41) which is provided on said first insulating layer (40), has an opening overlapping said groove or hole (42,43) and includes Si, C, N and H; and
a conductive layer (21,22) buried in said groove or hole (42,43) and said opening, wherein said second insulating layer (41) contains 10 21 to 10 22 CH n groups per volume area, n being an integer of 1 to 3. |
