发明名称 END POINT DETECTOR IN SEMICONDUCTOR FABRICATION EQUIPMENT AND METHOD THEREFORE
摘要 PURPOSE: An end point detector in semiconductor fabrication equipment and method therefore are provided to obtain the real-time detection of the etching termination time point and to improve the sensitivity of the detection by using a plurality of optical wavelength. CONSTITUTION: Plasma light beam generated in a chamber(100) is divided into a plurality of optical signals having a different wavelength by using an optical device(220). A photoelectric conversion device(230) is used for transforming the optical signals to electric signals corresponding to the intensity of the optical signal, wherein the photoelectric conversion device(230) is provided with a plurality of unit conversion devices having a peculiar address, respectively. An A/D converter(240) is used for transforming the electric signals to luminous intensity data as digital data. A signal operation unit(300) is used for supplying accumulated luminous intensity data to a control system(400) in real time. Then, an etching termination time point of a plasma etching equipment is controlled by the control system(400) using the accumulated luminous intensity data.
申请公布号 KR20030038018(A) 申请公布日期 2003.05.16
申请号 KR20010069422 申请日期 2001.11.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUN, PIL GWON;KIM, U IL;LEE, GI SEOK;LEE, HEON JEONG
分类号 H01L21/3065;H01J37/32;H01L21/00;H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/3065
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