发明名称 |
END POINT DETECTOR IN SEMICONDUCTOR FABRICATION EQUIPMENT AND METHOD THEREFORE |
摘要 |
PURPOSE: An end point detector in semiconductor fabrication equipment and method therefore are provided to obtain the real-time detection of the etching termination time point and to improve the sensitivity of the detection by using a plurality of optical wavelength. CONSTITUTION: Plasma light beam generated in a chamber(100) is divided into a plurality of optical signals having a different wavelength by using an optical device(220). A photoelectric conversion device(230) is used for transforming the optical signals to electric signals corresponding to the intensity of the optical signal, wherein the photoelectric conversion device(230) is provided with a plurality of unit conversion devices having a peculiar address, respectively. An A/D converter(240) is used for transforming the electric signals to luminous intensity data as digital data. A signal operation unit(300) is used for supplying accumulated luminous intensity data to a control system(400) in real time. Then, an etching termination time point of a plasma etching equipment is controlled by the control system(400) using the accumulated luminous intensity data.
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申请公布号 |
KR20030038018(A) |
申请公布日期 |
2003.05.16 |
申请号 |
KR20010069422 |
申请日期 |
2001.11.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUN, PIL GWON;KIM, U IL;LEE, GI SEOK;LEE, HEON JEONG |
分类号 |
H01L21/3065;H01J37/32;H01L21/00;H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/3065 |
代理机构 |
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主权项 |
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