| 摘要 |
PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to be capable of improving photo sensitivity of short wavelength and capacitance of a photodiode. CONSTITUTION: A semiconductor substrate(30) of the first conductive type is defined to a transfer transistor region(T) and a photodiode region(P). The first and second field oxide layer(31,32) are formed on the substrate of the photodiode region(P). A deep N- impurity region(35) is formed in the substrate(30) of the photodiode region(P). At this time, the deep N- impurity region(35) has a step difference by forming shallowly at lower part of the field oxide layers(32).
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