| 摘要 |
PURPOSE: A non-volatile ferroelectric memory device and a driving method thereof are provided to improve the efficiency of layout by using one sense amplifier block shared with plural cell arrays. CONSTITUTION: A plurality of cell array blocks(50_1 to 50_n) have a plurality of sub cell array blocks including a plurality of unit cells. A plurality of main bit lines correspond to the sub cell array blocks in column units. A plurality of sub bit lines are formed to the same direction as the main bit lines. A plurality of column selectors(51_1 to 51_n) correspond to the cell array portions(50_1 to 50_n). A sense amplifier block(52) is commonly used for the cell array portions(50_1 to 50_n). A reference generation(53) is commonly connected with plural sense amplifiers within the sense amplifier block(52). A plurality of main bit line pull-up portions(54_1 to 54_n) pull up the main bit lines of each cell array.
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