| 摘要 |
PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to be capable of restraining the reset noise due to potential variation of a sensing region when a reset transistor is off. CONSTITUTION: A reset transistor region is defined in a semiconductor substrate(41) by a field oxide layer(42). A gate oxide layer(43) is formed on the reset transistor region. A gate is formed on the gate oxide layer. A spacer(45) is formed at both sidewalls of the gate. A drain(48) as a sensing region(SR) and a source(49) as a power voltage(VDD) are formed in the substrate. A channel region(50) is formed at the lower part of the gate. At the time, the thickness of the gate oxide layer(43) is relatively thick at a portion adjacent to the sensing region(SR) compared to a portion adjacent to the power voltage(VDD).
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