POROUS SILICA THIN FILM FOR INSULATION THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a porous silica thin film which has a low specific dielectric constant and mechanical strength enough for a CMP process in a copper wiring process for a semiconductor element. SOLUTION: This porous silica thin film is characterized in that a bridging coefficient is 70% or more, at least one or more scattering peaks exist within a scattering angle (2θ) of 0.5 to 3 deg. in an X-ray scattering measurement, and the surface density of a silanol group is 2% or less.