| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a heat breakdown occurs in a semiconductor element without externally efficiently dissipating a heat generated during operating the element. SOLUTION: The package for housing the semiconductor element comprises a base 1, a frame-like insulator 2 having a wiring layer 6, and a cover 3. The insulator 2 contains a sintered material containing an Si component of 25 to 80 wt.% in terms of an SiO2 , a Ba component of 15 to 70 wt.% in terms of a BaO, a B component of 1.5 to 5 wt.% in terms of B2 O3 , and a Ca component of 0 to 30 wt.% in terms of CaO. The base 1 contains a cubic crystal boron nitride of 55 to 90 wt.% and a copper of 10 to 45 wt.%. |
