| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting diode element wherein generation ratio of chip peeling is reduced, and to provide its mount method. SOLUTION: The device has a light emitting diode element body 120 wherein a clad layer, a light emitting layer and a clad layer are formed one by one on a GaAs substrate 121, a bonding side electrode 130 formed on the clad layer of an upper side of the body, and a mount side electrode 110 formed in a lower side of the light emitting diode element body 120. The mount side electrode consists of an Au deposit film 111, a first metallic film 112 laminated on the deposit film, a second metallic film 115 laminated on the first metallic film, an Au film 113 laminated on the second metallic film, and an AuSn film 114 laminated on the Au film. The second metallic film has a melting point higher than that of the AuSn film. |
