METHOD OF FORMING BUMP, FLIP CHIP, SEMICONDUCTOR DEVICE, THEIR MANUFACTURING METHODS, CIRCUIT BOARD, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a bump by which a bump partly composed of low-melting point metal can be formed easily. SOLUTION: This method of forming a bump includes the formation of metallic layers 20 and 24 on pads 12 and a brazing material layer 28 on the metallic layer 24 by displacement plating. The metallic layer 20 is formed of, for example, nickel and the metallic layer 24 is formed of, for example, copper. In addition, the brazing material layer 28 is formed of, for example, tin.