CRYSTALLINE SILICON THIN FILM TRANSISTOR PANEL FOR OELD AND FABRICATION METHOD

摘要

PURPOSE: A crystalline silicon thin film transistor panel is provided to form a pixel transistor and a drive circuit transistor at the same time while satisfying off-current and on-current characteristics at the same time. CONSTITUTION: A transparent substrate comprises a pixel region including a plurality of unit pixels and a drive circuit region. A pixel transistor is formed every unit pixel of the pixel region and comprises two or more thin film transistors consisting of a crystalline silicon active layer, a gate insulation layer and a gate electrode. A storage capacitor is formed every unit pixel of the substrate. A plurality of drive circuit transistors are formed every drive circuit region and comprises a crystalline silicon active layer, a gate insulation layer and a gate electrode. The gate electrode(56) of at least one or more thin film transistors of the pixel transistor is configured to have two electrodes.