| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching apparatus and an etching method that has high etching uniformity and can improve yield. SOLUTION: The etching apparatus has a semiconductor wafer 1, a stage 2 for retaining the semiconductor wafer 1, a motor 3 for rotating the stage 2, and a spray nozzle 4 that is placed opposite to the semiconductor wafer 1 and splashes etching chemical liquid to a region including a center section from the end section of the semiconductor wafer 1. In this case, flowrate distribution F(x) (x: coordinates in a specific diametral direction in a semiconductor wafer) of the etching chemical liquid that is splashed to the semiconductor wafer 1 from the spray nozzle 4 is substantially set to F(x)/Fmax>=0.7 to a maximum flowrate Fmax.
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