| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron-beam lithography system, in which the influence of the Coulomb effect is reduced by performing reduction projection using an illumination optical system under conditions, in which the emitting angle from an electron gun is not asymmetrical, and to provide a method of adjusting the apparatus and a method of electron-beam lithography. SOLUTION: In a projection reduction optical system, a shaping aperture 10 is illuminated through an illumination optical system 46 constituted by an asymmetrical lens system, and the image of the shaping aperture is projected through a projection optical system. A plane normal to the optical axis is defined as an XY plane. The points 41, 40 at which an X-orbit 4 and a Y-orbit 5 of an electron beam emitted from an electron gun respectively intersect the optical axis, are located above and below, the shaping aperture 10. The illumination optical system is adjusted so that the distances from the shaping aperture 10 to the upper and to the lower positions are at an equal distance (=d), and the magnification ratio of the projection from the electron gun is the same. Isotropic illumination of the shaping apertures, using an electron gun whose aspect ratios are not different and an optical system in which the Coulomb effect is reduced, can be realized.
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